IRFD120PBF - HEXFET Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRFD120PBF
Manufacturer	International Rectifier (now Infineon)
File Size	1.78 MB
Description	HEXFET Power MOSFET
Datasheet	IRFD120PBF Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRFD120	Power MOSFET
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IRFD110	Power MOSFET
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IRFD010	Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95928 IRFD120PbF Lead-Free www.DataSheet4U.com www.irf.com 1 10/27/04 IRFD120PbF 2 www.irf.com IRFD120PbF www.irf.com 3 IRFD120PbF 4 www.irf.com IRFD120PbF www.irf.com 5 IRFD120PbF 6 www.irf.com IRFD120PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.