IRFD214
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple binations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
HD-1
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max. 0.45 0.29 3.6 1.0 0.0083 ±20 57 0.45 0.10 4.8 -55 to + 150
300 (1.6mm from...
