| Part number | IRFD210PBF |
|---|---|
| Datasheet | IRFD210PBF_InternationalRectifier.pdf |
| File Size | 1.79 MB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | HEXFET Power MOSFET |
|
|
IRFD210PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer .. + + - dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + - Reverse Polarity for P-Channel Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
IRFD210 | N-Channel Power MOSFET | Intersil Corporation |
 |
IRFD210 | Power MOSFET | Vishay |
 |
IRFD210 | FIELD EFFECT POWER TRANSISTOR | GE |
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRFD210 | Power MOSFET |
| IRFD214 | Power MOSFET |
| IRFD220 | Power MOSFET |
| IRFD220PBF | Power MOSFET |
| IRFD224 | Power MOSFET |
| IRFD010 | Transistor |
| IRFD012 | Transistor |
| IRFD014 | Power MOSFET |
| IRFD024 | Power MOSFET |
| IRFD110 | Power MOSFET |
