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IRFD210 Datasheet PDF

Vishay IRFD210

The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
Part No. IRFD210
Datasheet IRFD210 Download
Manufacturer
Vishay
Description Power MOSFET
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IRFD210 datasheet page 1 preview

FEATURES

● Dynamic dV/dt rating
● Repetitive avalanche rated
● For automatic insertion
● End stackable
● Fast switching
● Ease of paralleling
● Simple drive requirements
● Material categorization: for definitions of compliance please see

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. ORDERING INFORMATION Package Lead (Pb)-free HVMDIP IRFD210PbF

ABSOLUTE MAXIMUM RATINGS

(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current TA = 25 °C VGS at 10 V ID TA = 100 °C Pulsed drain current a IDM Linear derating factor Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TA = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) For 10 s TJ, Tstg Notes a.
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