Datasheet Summary
~~D~[P~U
FIELD EFFECT POWER TRANSISTOR
IRFD21 0,211 D82BN2,M2
0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.
Features
- Polysilicon gate
- Improved stability and...
