Intersil IRFD210
N-Channel Power MOSFET
| Part No. | IRFD210 |
|---|---|
| Datasheet | IRFD210 Download |
| Manufacturer |  Intersil |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 0.6A, 200V● rDS(ON) = 1.500Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD210 PACKAGE HEXDIP BRAND IRFD210 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-281 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD210
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRFD210 200 200 0.6 2.5 ±20 1.0 0.008 30 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
