IRFD211 Description
~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies,...
IRFD211 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement