IRFD213 Description
~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: supplies, inverters, converters and...
IRFD213 Key Features
- Polysilicon gate
- Improved stability and reliability
- No secondary breakdown
- Excellent ruggedness
- Ultra-fast switching
- Independent of temperature
- Voltage controlled
- High transconductance
- Low input capacitance
- Reduced drive requirement