IRFD213 Datasheet Field Effect Power Transistor

Manufacturer: GE

Overview: ~~D~[F~ FIELD EFFECT POWER TRANSISTOR IRFD212,213 0.45 AMPERES 200, 150 VOLTS RDS(ON) = 2.4 il This series ofN-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power . supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRFD213
Manufacturer	GE
File Size	179.97 KB
Description	FIELD EFFECT POWER TRANSISTOR
Datasheet	IRFD213 IRFD212 Datasheet (PDF)

Key Features

Polysilicon gate - Improved stability and reliability.
No secondary breakdown - Excellent ruggedness.
Ultra-fast switching - Independent of temperature.
Voltage controlled - High transconductance.
Low input capacitance - Reduced drive requirement.
Excellent thermal stability - Ease of paralleling N-.

IRFD213 Distributor

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