Datasheet Details
| Part number | IRFD310 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 303.80 KB |
| Description | Power MOSFET |
| Download | IRFD310 Download (PDF) |
|
|
| Part number | IRFD310 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 303.80 KB |
| Description | Power MOSFET |
| Download | IRFD310 Download (PDF) |
|
|
|
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements PD -9.1225 IRFD310 VDSS = 400V RDS(on) = 3.6Ω ID = 0.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFD310 | N-Channel Power MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| IRFD320 | Power MOSFET |
| IRFD010 | Transistor |
| IRFD012 | Transistor |
| IRFD014 | Power MOSFET |
| IRFD024 | Power MOSFET |
| IRFD110 | Power MOSFET |
| IRFD110PBF | HEXFET Power MOSFET |
| IRFD120 | Power MOSFET |
| IRFD120PBF | HEXFET Power MOSFET |
| IRFD123 | N-Channel Power MOSFET |