IRFD310 Overview
IRFD310 Data Sheet July 1999 File Number 2324.4 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators,...
IRFD310 Key Features
- 0.4A, 400V
- rDS(ON) = 3.600Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Related Literature
- TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards”
