IRFD310 Datasheet N-channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: IRFD310 Data Sheet July 1999 File Number 2324.4 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17444.

Datasheet Details

Part number	IRFD310
Manufacturer	Intersil (now Renesas)
File Size	50.87 KB
Description	N-Channel Power MOSFET
Datasheet	IRFD310_IntersilCorporation.pdf

Key Features

0.4A, 400V.
rDS(ON) = 3.600Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD310.

IRFD310 Distributor

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	IRFD310	Power MOSFET	International Rectifier

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