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IRFF9110 Datasheet Hexfet Transistors Thru-hole (to-205af)

Manufacturer: International Rectifier (now Infineon)

Overview: ( DataSheet : .. ) PD - 90388 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) IRFF9110 -100V 1.2Ω ID -2.5A  IRFF9110 100V, P-CHANNEL The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance bined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Key Features

  • n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Di.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRFF9111 (IRFF9110 - IRFF9113) P-Channel Power MOSFET
IRFF9112 (IRFF9110 - IRFF9113) P-Channel Power MOSFET
IRFF9113 (IRFF9110 - IRFF9113) P-Channel Power MOSFET
IRFF9130 Repetitive Avalanche and dv/dt Rated Power MOSFET
IRFF9220 HEXFETTRANSISTORS
IRFF9230 P-CHANNEL TRANSISTOR
IRFF024 N-CHANNEL
IRFF110 HEXFET TRANSISTORS
IRFF120 N-channel Transistors
IRFF130 HEXFET TRANSISTORS

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