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IRFG110 - POWER MOSFET

Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

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PD - 90396G POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRFG110 IRFG110 JANTX2N7334 JANTXV2N7334 REF:MIL-PRF-19500/597 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.7 Ω ID 1.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
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