IRFH5110PBF Datasheet | International Rectifier

Features and Benefits Features Benefits Low RDSon (< 12.4 mΩ) Low Thermal Resistance to PCB (< 1.1°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5110TRPBF IRFH5110TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 100 ± 20 11 9.0 63 40 252 3.6 114 0.029 -55 to + 150 Units V A g g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through … are on page 8 .irf. 03/18/10 IRFH5110Pb F BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss .. Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise...