IRFH5207PBF Description
IRFH5207PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 9.6 39 1.7 71 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters.