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IRFH5207PBF - HEXFET Power MOSFET

Key Features

  • Features Benefits Low RDSon (< 9.6 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -96298 www.DataSheet4U.com IRFH5207PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 75 9.6 39 1.7 71 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 9.6 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (<0.