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IRFH5215PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
150 58 21 2.3 27
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
Applications
• • • •
Primary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Benefits Lower Conduction Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Note
Features and Benefits
Features Low RDSon (< 58 mΩ) Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.
IRFH5215PBF Datasheet
