IRFH5215PBF Datasheet | International Rectifier

Features and Benefits Features Low RDSon (< 58 mΩ) Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5215TRPBF IRFH5215TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 EOL notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 150 ± 20 5.0 4.0 27 17 108 3.6 104 0.029 -55 to + 150 Units V A g g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through … are on page 8 1 .irf. © 2014 International Rectifier Submit Datasheet Feedback January 13, 2014 Free Datasheet http://.. IRFH5215Pb F Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Single Pulse...