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IRFH5220PBF - HEXFET Power MOSFET

Key Features

  • Features Benefits Low RDSon Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5220TRPBF IRFH5220TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vend.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFH5220PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 200 99.9 20 2.3 20 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Features Benefits Low RDSon Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.