IRFH5220PBF Description
IRFH5220PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 200 99.9 20 2.3 20 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters.