Datasheet Summary
IRFH5303PbF
HEXFET® Power MOSFET VDS RDS(on) max
(@VGS = 10V)
30 4.2 15 0.6 82
V m
:
Qg (typical) RG (typical) ID nC
:
(@Tc(Bottom) = 25°C)
PQFN 5X6 mm
Applications
- Control MOSFET for high frequency buck converters
Features and Benefits
Features
Benefits
Low charge (typical 15nC) Low Rg (typical 0.6 Ω) Low Thermal Resistance to PCB (<2.7°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification
Lower Switching Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒...