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IRFH5300PBF - HEXFET Power MOSFET

Key Features

  • Features Benefits Low RDSon (≤ 1.4mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density Industry-Standard Pinout ⇒ Multi-Vendor Compatibility Easier Manufacturing Compatible with Existing Surface Mount Techniques Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD -97410 www.DataSheet4U.com IRFH5300PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 1.4 50 1.3 100 V m : Qg (typical) RG (typical) ID nC (@Tc(Bottom) = 25°C) h : A PQFN 5X6 mm Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (≤ 1.4mΩ) Low Thermal Resistance to PCB (≤ 0.5°C/W) 100% Rg tested Low Profile (≤ 0.