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IRFH5301PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 1.85 37 1.5 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for Buck Converters • Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features Benefits
Low RDSon (<1.85mΩ) Low Thermal Resistance to PCB (<1.1°C/W) 100% Rg tested Low Profile (<0.
IRFH5301PBF Datasheet
