IRFH5301PBF Datasheet | International Rectifier

PD -96276 .. HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 1.85 37 1.5 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications - OR-ing MOSFET for 12V (typical) Bus in-Rush Current - Synchronous MOSFET for Buck Converters - Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (<1.85mΩ) Low Thermal Resistance to PCB (<1.1°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Increased Power...