Datasheet4U Logo Datasheet4U.com

IRFH5302PBF - HEXFET Power MOSFET

Key Features

  • Features Benefits Low RDSon (≤ 2.1m Ω) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabilit.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFH4201 Power MOSFET Infineon
IRFH4201PbF Power MOSFET Infineon
IRFH7184PbF Power MOSFET Infineon
IRFH7440PbF Power MOSFET Infineon
IRFH8201PbF MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFH5302D Power MOSFET
IRFH5302DPBF Power MOSFET
IRFH5302DTRPBF Power MOSFET
IRFH5300PBF HEXFET Power MOSFET
IRFH5301PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD -97156 www.DataSheet4U.com IRFH5302PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 2.1 29 1.6 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (≤ 2.1m Ω) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.