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IRFH5302PBF - HEXFET Power MOSFET

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Features

  • Features Benefits Low RDSon (≤ 2.1m Ω) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliabilit.

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PD -97156 www.DataSheet4U.com IRFH5302PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 2.1 29 1.6 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications • OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Synchronous MOSFET for buck converters • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Benefits Low RDSon (≤ 2.1m Ω) Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.
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