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IRFH7107PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
75 8.5 48 0.6 75
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
Applications
• • • •
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Features and Benefits
Features Low RDSon (< 8.5mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.