Datasheet Summary
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
75 8.5 48 0.6 75
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
Applications
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Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Features and Benefits
Features
Low RDSon (< 8.5mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques RoHS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Benefits Lower Conduction Losses Enables better thermal dissipation results in Increased Power Density
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Multi-Vendor...