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IRFH7184PBF - Power MOSFET

General Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: Al

Key Features

  • Low RDS(ON) (< 4.8m) Internal Snubber Low Thermal Resistance to PCB (.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 100 4.8 36 1.2 128 V m nC  A   Applications  Optimized for Secondary Side Synchronous Rectification  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Hot Swap and Active O-Ring  BLDC Motor Drive FastIRFET™ IRFH7184PbF HEXFET® Power MOSFET   PQFN 5X6 mm Features Low RDS(ON) (< 4.8m) Internal Snubber Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg Tested Low Profile (<1.