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IRFH7187PbF - Power MOSFET

General Description

Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE Note: All di

Key Features

  • Low RDS(ON) (< 6.0m) Internal Snubber Low Thermal Resistance to PCB (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 100 6.0 33 0.92 105 V m nC  A   FastIRFET™ IRFH7187PbF HEXFET® Power MOSFET   PQFN 5X6 mm Applications  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies  Secondary Side Synchronous Rectifier  Hot Swap and Active O-Ring Features Low RDS(ON) (< 6.0m) Internal Snubber Low Thermal Resistance to PCB (<0.95°C/W) 100% Rg Tested Low Profile (<1.