IRFH7936PBF Description
5.6 40 Units V A W W/°C °C Units °C/W Notes through are on page 9 1 .irf. © 2013 International Rectifier August 16, 2013 IRFH7936PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
IRFH7936PBF Key Features
- Synchronous MOSFET for Notebook Processor Power
- Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V HEXFET® Power MOSFE
- Very low RDS(ON) at 4.5V VGS
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
- 100% Tested for RG
- Lead-Free (Qualified up to 260°C Reflow)
- RoHS pliant (Halogen Free)