IRFH7936PBF Datasheet | International Rectifier

IRFH7936Pb F Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg 4.8mΩ@VGS = 10V 17n C Benefits l Very low RDS(ON) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free (Qualified up to 260°C Reflow) l Ro HS pliant (Halogen Free) l Low Thermal Resistance l Large Source Lead for more reliable Soldering Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current g Power Dissipation g Power Dissipation g Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter f RθJC g RθJA Junction-to-Case Junction-to-Ambient PQFN 5X6 mm Max. 30 ± 20 20 16 54 160 3.1 2.0 0.025 -55 to + 150 Typ. - - - - - - Max. 5.6 40 Units V W W/°C °C Units °C/W Notes  through … are on page 9 1 .irf. © 2013 International Rectifier August 16, 2013 IRFH7936Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max....