IRFI540NPBF Datasheet | International Rectifier

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in mercial-industrial applications. The moulding pound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLP AK Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Max. 20 14 110 54 0.36 ±20 300 16 5.4 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf•in (1.1N•m) Units A W W/°C V m J A m J V/ns °C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚† Avalanche Current† Repetitive Avalanche Current Peak Diode Recovery dv/dt - † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient Min. –––– –––– Typ. –––– –––– Max. 2.8 65 Units °C/W 11/13/03 IRFI540NPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage...