IRFIB7N50A Datasheet | International Rectifier

- 91810 SMPS MOSFET HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS‡ Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) l VDSS 500V Rds(on) max 0.52Ω 6.6A TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 6.6 4.2 44 60 0.48 ± 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: l l l Two Transistor Forward Half & Full Bridge Convertors Power Factor Correction Boost Notes  through ‡are on page 8 .irf. 6/15/99 Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 - - - - - - V VGS = 0V, ID = 250µA - - - 0.61 - - - V/°C Reference to 25°C, ID = 1m...