IRFIB7N50A Datasheet | Vishay

FEATURES - Low Gate Charge Qg Results in Simple Drive Requirement Available - Improved Gate, Avalanche and Dynamic d V/dt Ro HS- Ruggedness PLIANT - Fully Characterized Capacitance and Avalanche Voltage and Current - Effective Coss Specified - pliant to Ro HS directive 2002/95/EC APPLICATIONS - Switch Mode Power Supply (SMPS) - Uninterruptible Power Supply - High Speed Power Switching - High Voltage Isolation = 2.5 k VRMS (t = 60 s, f = 60 Hz) TYPICAL SMPS TOPOLOGIES - Two Transistor Forward - Half and Full Bridge Convertors - Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free Sn Pb TO-220 FULLPAK IRFIB7N50APb F Si HFIB7N50A-E3 IRFIB7N50A Si HFIB7N50A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currentf Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Repetitive Avalanche Currenta, e Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 4.5 m H, RG = 25 Ω, IAS = 11 A (see fig. 12). c. ISD ≤ 11 A, d I/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFB11N50A, Si HFB11N50A data and test conditions. f. Drain current limited by maximum junction temperature. LIMIT 500 ± 30 6.6 4.2 44 0.48 275 11 6.0 60 6.9 - 55 to + 150 300d 10...