IRFIB7N50A Description
IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.52 TO-220 FULLPAK D G GDS S N-Channel.
IRFIB7N50A Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt RoHS
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified
- pliant to RoHS directive 2002/95/EC