IRFIB7N50LPbF
IRFIB7N50LPbF is Power MOSFET manufactured by International Rectifier.
Features and Benefits
- Super Fast body diode eliminates the need for external diodes in ZVS applications.
- Lower Gate charge results in simpler drive requirements.
- Enhanced dv/dt capabilities offer improved ruggedness.
- Higher Gate voltage threshold offers improved noise immunity.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max. 6.8 4.3 27 46
Units A W
VGS dv/dt TJ TSTG
Linear Derating Factor Gate-to-Source Voltage e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.37 ±30
24 -55 to + 150
W/°C V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case ) x x10lb in (1.1N m)
Symbol IS
Parameter Continuous Source Current
Min. Typ. Max. Units Conditions
- -
- -
- - 6.8
MOSFET symbol
(Body Diode)
A showing the
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward...
