IRFIB7N50APBF Datasheet | International Rectifier

SMPS MOSFET - 94805 IRFIB7N50APb F HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching High Voltage Isolation = 2.5KVRMS Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN 1001) .. VDSS 500V Rds(on) max 0.52Ω 6.6A TO-220 FULLP AK Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 6.6 4.2 44 60 0.48 ± 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Units A W W/°C V V/ns °C Applicable Off Line SMPS Topologies: Two Transistor Forward Half & Full Bridge Convertors Power Factor Correction Boost Notes through are on page 8 .irf. 10/31/03 IRFIB7N50APb F Static @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 - - - - - - V VGS = 0V, ID = 250µA - - - 0.61 -...