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PD - 94445
SMPS MOSFET
Applications l High frequency DC-DC converters
IRFL4315
HEXFET® Power MOSFET RDS(on) max ID 185mΩ@VGS = 10V 2.6A
VDSS
150V
Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
S O T -2 2 3
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
2.6 2.1 21 2.8 0.02 ± 30 6.