IRFL4315PbF Datasheet | International Rectifier

Applications l High frequency DC-DC converters - 95258A IRFL4315Pb F VDSS 150V HEXFET® Power MOSFET RDS(on) max 185m W@VGS = 10V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l Lead-Free Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation- Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds SOT-223 Max. 2.6 2.1 21 2.8 0.02 ± 30 6.3 -55 to + 150 300 (1.6mm from case ) Units W W/°C V V/ns °C Thermal Resistance Symbol RθJA Parameter Junction-to-Ambient (PCB Mount, steady state)- Typ. - - - Notes  through † are on page 8 .irf. Max. 45 Units °C/W 09/22/10 IRFL4315Pb F Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on)...