Datasheet4U Logo Datasheet4U.com

IRFM044 - N-Channel Power MOSFET

General Description

HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high trans conductance.

Key Features

  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Electrically Isolated.
  • Dynamic dv/dt Rating.
  • Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C ID2 @ VGS = 10V, TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD-90708D IRFM044 POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) IRFM044 0.04 ID 35A* 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Description HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high trans conductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.