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IRFM044 Datasheet N-channel Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD-90708D IRFM044 POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) IRFM044 0.

General Description

HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance bined with high trans conductance.

HEXFET transistors also

Key Features

  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Electrically Isolated.
  • Dynamic dv/dt Rating.
  • Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C ID2 @ VGS = 10V, TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche.

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