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Provisional Data Sheet No. PD-9.1388A REPETITIVE AVALANCHE AND dv/dt RATED IRFM260
N-CHANNEL HEXFET ® TRANSISTOR 200Volt, 0.060Ω , HEXFET
HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance bined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Product Summary
Part Number IRFM260 BV DSS 200V RDS(on) 0.
