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IRFM360 - N-Channel MOSFET

Key Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFM340 N-CHANNEL HEXFET MOSFETTECHNOLOGY
IRFM044 N-Channel Power MOSFET
IRFM064 POWER MOSFET THRU-HOLE (TO-254AA)
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 90712B POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM360 IRFM360 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.20 Ω ID 23A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.