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N-CHANNEL POWER MOSFET
IRFM360
• Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package
• Designed For Switching, Power Supply, Motor Control and Amplifier Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain – Source Voltage
400V
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current Tc = 25°C
23A
ID
Continuous Drain Current Tc = 100°C
14A
IDM
Pulsed Drain Current (1)
92A
PD
Total Power Dissipation at Tc = 25°C
250W
Derate Above 25°C
2.0W/°C
TJ
Junction Temperature Range
-55 to +150°C
Tstg
Storage Temperature Range
-55 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Max. 0.
IRFM360 Datasheet
