IRFM460 - Power MOSFET

Product Overview

International Rectifier

Part number	IRFM460
Manufacturer	International Rectifier
File Size	1.20 MB
Description	Power MOSFET
Datasheet	IRFM460 Datasheet
Additional preview pages of the IRFM460 datasheet.

HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high trans conductance.

Simple Drive Requirements.
Hermetically Sealed.
Dynamic dv/dt Rating.
Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diod.

Other Datasheets by International Rectifier

Published: Oct 27, 2005 |