IRFM460 Datasheet | International Rectifier

Description HEXFET MOSFET technology is the key to IR Hi Rel advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance bined with high trans conductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heat sink. This improves thermal efficiency and reduces drain capacitance. TO-254AA Features - Simple Drive Requirements - Hermetically Sealed - Dynamic dv/dt Rating - Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt  TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight Value 19 12 76 250 2.0 ± 20 1200 19 25 3.5 -55 to + 150 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) Units W W/°C V m J A m J V/ns °C g For Footnotes refer to the page 2. International Rectifier Hi Rel Products, Inc. 2021-04-30 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Symbol Parameter Min. Typ. Max....