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IRFM460 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number RDS(on) ID IRFM460 0.

General Description

HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high trans conductance.

HEXFET transistors also

Key Features

  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Dynamic dv/dt Rating.
  • Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diod.

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