s s s s s s s
Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive A.
Full PDF Text Transcription for IRFN440 (Reference)
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IRFN440. For precise diagrams, and layout, please refer to the original PDF.
Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1552 HEXFET® POWER MOSFET 500 Volt, 0.85Ω HEXFET HEXFET technology is the key...
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XFET® POWER MOSFET 500 Volt, 0.85Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.
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IRFN440 Datasheet
