n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Surface Mount n Dynamic dv/dt Rating n Light-weight
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor
VGS EAS IAR EAR dv/dt
Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche.
Full PDF Text Transcription for IRFN450 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFN450. For precise diagrams, and layout, please refer to the original PDF.
PD - 90418C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN450 0.415 Ω ID 12A IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-...
View more extracted text
12A IRFN450 JANTX2N7228U JANTXV2N7228U REF:MIL-PRF-19500/592 500V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.
More Datasheets from International Rectifier (now Infineon)
IRFN450 Datasheet
