IRFP17N50L Datasheet | International Rectifier

- 94322 SMPS MOSFET Applications l l l l l HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Zero Voltage Switching (ZVS) and High Frequency Circuit Uninterruptible Power Supply High Speed Power Switching PWM Inverters VDSS 500V RDS(on) typ. 0.28Ω Trr typ. 170ns 16A Benefits l l l l l Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low Trr and Soft Diode Recovery High Performance Optimised Anti-parallel Diode Parameter Max. 16 11 64 220 1.8 ± 30 13 -55 to + 150 300 10 TO-247AC Absolute Maximum Ratings Units A W W/°C V V/ns ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw °C lbft.in(N.m) Diode Characteristics Symbol IS VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units Conditions D 16 MOSFET symbol - - - - - - showing the A G 64 integral reverse - - - - - - S p-n junction diode. - - - - - - 1.5 V TJ = 25°C, IS = 16A, VGS = 0V -...