IRFP17N50L Datasheet | Vishay

FEATURES - Super Fast Body Diode Eliminates the Need For External Diodes in ZVS Applications - Low Gate Charge Results in Simple Drive Requirement Available Ro HS- PLIANT - Enhanced d V/dt Capabilities Offer Improved Ruggedness - Higher Gate Voltage Threshold Offers Improved Noise Immunity - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Zero Voltage Switching SMPS - Tele and Server Power Supplies - Uninterruptible Power Supply - Motor Control applications TO-247AC IRFP17N50LPb F Si HFP17N50L-E3 IRFP17N50L Si HFP17N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc TC = 25 °C EAS IAR EAR PD d V/dt Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.0 m H, Rg = 25 Ω, IAS = 16 A (see fig. 12). c. ISD ≤ 16 A, d I/dt ≤ 347 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 16 11 64 1.8 390 16 22 220 13 - 55 to + 150 300d 10 1.1 UNIT V W/°C m J A m J W...