IRFP17N50LS Datasheet | International Rectifier

- 94351 SMPS MOSFET Applications l l l l l l l l l l HEXFET® Power MOSFET Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters VDSS 500V RDS(on) typ. 0.28Ω Trr 170ns 16A Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Low Trr and Soft Diode Recovery High Performance Optimised Anti-parallel Diode Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt - Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw SMD-247 Absolute Maximum Ratings Max. 16 11 64 220 1.8 ± 30 13 -55 to + 150 300 10 Units A W W/°C V V/ns °C lbft.in(N.m) Diode Characteristics Symbol IS VSD trr Qrr IRRM ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units Conditions D 16 MOSFET symbol - - - - - - showing the A G 64 integral reverse - - - - - - S p-n junction diode. - - -...