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IRFP4232PBF - Power MOSFET

General Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels.

This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.

Key Features

  • l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 96965A PDP MOSFET Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability IRFP4232PbF Key Parameters 250 300 30 310 117 175 D VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V EPULSE typ.