IRFP4232PBF Datasheet | International Rectifier

Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability IRFP4232Pb F Key Parameters 250 300 30 310 117 175 VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V EPULSE typ. IRP max @ TC= 100°C TJ max V V m: µJ A °C TO-247AC Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Parameter VGS VGS (TRANSIENT) ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N Max. ±20 ±30 60 42 240 117 430 210 2.9 -40 to + 175 Units W W/°C °C Thermal Resistance Parameter RθJC Junction-to-Case f Typ. - - - Max. Units °C/W Notes  through … are on page 8 .irf. 04/21/05 IRFP4232Pb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th)...