IRFP4242PBF Datasheet | International Rectifier

Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability IRFP4242Pb F Key Parameters 300 360 49 93 175 VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100°C TJ max V V m: A °C TO-247AC Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features bine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. G a te D ra in S o u rc e Absolute Maximum Ratings Parameter VGS ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 10lb in (1.1N m) Max. ±30 46 33 190 93 430 210 2.9 -40 to + 175 300 Units V A c Repetitive Peak Current g W W/°C °C x x Thermal Resistance RθJC Junction-to-Case f Parameter Typ. - - - Max. Units °C/W Notes  through … are on page 8 .irf. 7/25/05 IRFP4242Pb...