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IRFP4710 - ower MOSFET

Key Features

  • S = 45A, VGS = 10V.
  • ISD ≤ 45A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94361 IRFP4710 HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Motor Control l Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l VDSS 100V RDS(on) max 0.