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IRFR120Z - AUTOMOTIVE MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax G PD - 94754 IRFR120Z IRFU120Z HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.7A S.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

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IRFR120ZPBF Power MOSFET
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IRFR120N Power MOSFET

Full PDF Text Transcription (Reference)

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AUTOMOTIVE MOSFET Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax G PD - 94754 IRFR120Z IRFU120Z HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 190mΩ ID = 8.7A S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.