IRFR120ZPBF Datasheet | International Rectifier

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 95772B IRFR120ZPb F IRFU120ZPb F HEXFET® Power MOSFET VDSS = 100V RDS(on) = 190mΩ ID = 8.7A D-Pak I-Pak IRFR120ZPb F IRFU120ZPb F Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ™ ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TC = 25°C Power Dissipation Linear Derating Factor Gate-to-Source Voltage d EAS (Thermally limited) Single Pulse Avalanche Energy h EAS (Tested ) Single Pulse Avalanche Energy Tested Value Ù IAR Avalanche Current g EAR Repetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθJA i Junction-to-Case Junction-to-Ambient (PCB mount) RθJA Junction-to-Ambient HEXFET® is a registered trademark of International Rectifier....