IRFR3704PBF Overview
For remended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 9 .irf. 1 12/13/04 IRFR/U3704PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V (BR)DSS ∆V(BR)DSS/∆TJ RDS(on) V GS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
IRFR3704PBF Key Features
- High Frequency DC-DC Isolated Converters with Synchronous Rectification for Tele and Industrial use High Frequ
- 100% RG Tested
- Lead-Free Benefits
- Ultra-Low RDS(on)
- IRFR3704PbF IRFU3704PbF HEXFET® Power MOSFET VDSS 20V RDS(on) max 9.5mΩ ID 75A Very Low Gate Impedance Ful
