IRFR3704ZPbF Overview
3.1 50 110 Units V A W W/°C °C Units °C/W 1 12/03/04 IRFR/U3704ZPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. 41 12 4.8 Units mJ A mJ Diode Characteristics Parameter IS Continuous Source Curren.
IRFR3704ZPbF Key Features
- High Frequency Synchronous Buck Converters for puter Processor Power
- High Frequency Isolated DC-DC Converters with Synchronous Rectification for Tele and Industrial Use
- Lead-Free Benefits
- Very Low RDS(on) at 4.5V VGS
- Ultra-Low Gate Impedance
- Fully Characterized Avalanche Voltage and Current PD - 95442A IRFR3704ZPbF IRFU3704ZPbF HEXFET® Power MOSFE
