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IRFR5505 - HEXFET Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 ( .010) M A M B NOT ES: 0.58 (.023) 0.46 (.018) 2.28 (.090) 4.57 (.180) 1 DIME NSIO NING & T OLE.

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Full PDF Text Transcription

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PD - 9.1610B IRFR/U5505 HEXFET® Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount (IRFR5505) Straight Lead (IRFU5505) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.11Ω G S ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight www.DataSheet4U.
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